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| HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C T C = 25C; TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Note 1 VDSS ID25 RDS(on) 0.24 0.28 IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr 250 ns Maximum Ratings 1000 1000 20 30 36N100 34N100 36N100 34N100 33 30 144 136 36 64 4 5 580 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A A mJ J V/ns ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features W C C C C V~ V~ *Conforms to SOT-227B outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, ID = IT Note 2 Min. 1000 3.0 Characteristic Values Typ. Max. V 5.0 V * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls power supplies 200 nA TJ = 25C TJ = 125C 36N100 34N100 100 A 2 mA 0.24 0.28 Advantages * Low cost * Easy to mount * Space savings * High power density (c) 2002 IXYS All rights reserved 98897 (1/02) IXFE 36N100 IXFE 34N100 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK 0.07 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = IT, Note 2 Characteristic Values Min. Typ. Max. 18 28 15000 1400 340 81 82 150 40 455 120 185 0.22 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS-227 B Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM VGS = 0 Repetitive; pulse width limited by TJM 36N100 34N100 36N100 34N100 Characteristic Values Min. Typ. Max. 36 34 144 136 1.3 180 30 2 8 A A A A V ns ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % I F = IS, -di/dt = 100 A/s, V R = 100 V TJ = 25C TJ = 25C TJ = 25C Please see IXFN36N100 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t 300 ms, duty cycle d 2%. 3. IT Test current: IXFE36N100: IT = 18 A IXFE34N100: IT = 17 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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